BCR48PN Chip IC Original Chip Diode Transistor-Bipolar BJT-Array-Prebias

• Package Type:SOT-363-6
• Application:Chip Diode
• Place of Origin:CHINA
• Brand Name:INF
• Model Number:BCR48PN
• Type:Pre bias
• Description:Chip Diode
• Current - Collector (Ic) (Max):70mA,100mA
• Voltage - Collector Emitter Breakdown (Max):50 V
• Vce Saturation (Max) @ Ib, Ic:300mV @ 500UA,10mA
• Current - Collector Cutoff (Max):50 V
• DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA,5V
• Power - Max:250 mW
• Frequency - Transition:100MHz,200MHz
• Operating Temperature:- 65 C - + 150 C
• Mounting Type:Surface mount type
• Package / Case:SMD/SMT
• Resistor - Base (R1):47K Ω, 2200 Ω
• Resistor - Emitter Base (R2):47K Ω
• FET Type:BJT
• FET Feature:Pre bias
• Drain to Source Voltage (Vdss):0
• Current - Continuous Drain (Id) @ 25°C:0
• Rds On (Max) @ Id, Vgs:0
• Vgs(th) (Max) @ Id:0
• Gate Charge (Qg) (Max) @ Vgs:0
• Input Capacitance (Ciss) (Max) @ Vds:0

BCR48PN