SPW35N60C3   Original   Field Effect Transistor  - FET  MOSFET - Single
SPW35N60C3   Original   Field Effect Transistor  - FET  MOSFET - Single
SPW35N60C3   Original   Field Effect Transistor  - FET  MOSFET - Single
SPW35N60C3   Original   Field Effect Transistor  - FET  MOSFET - Single
SPW35N60C3   Original   Field Effect Transistor  - FET  MOSFET - Single
SPW35N60C3   Original   Field Effect Transistor  - FET  MOSFET - Single
SPW35N60C3   Original   Field Effect Transistor  - FET  MOSFET - Single

SPW35N60C3 Original Field Effect Transistor - FET MOSFET - Single

Model NO.:
SPW35N60C3
Price:
USD 0.10-0.10
Delivery:
FOB
Minimum order quantity:
1
  • Application:Not Applicable
  • Mounting Type:Through Hole
  • Place of Origin:CHINA
  • Brand Name:Inf
  • Model Number:SPW35N60C3
  • Type:Discrete semiconductor products
  • Description:Transistor
  • Current - Collector (Ic) (Max):34.6A
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Vce Saturation (Max) @ Ib, Ic:3.9V @ 1.9mA
  • Current - Collector Cutoff (Max):2.1 V
  • DC Current Gain (hFE) (Min) @ Ic, Vce:10 V
  • Power - Max:313W(Tc)
  • Frequency - Transition:313W(Tc
  • Operating Temperature:-55°C ~ 150°C(TJ)
  • Package / Case:PG-TO-247-3
  • FET Type:N channel
  • Drain to Source Voltage (Vdss):650V
  • Current - Continuous Drain (Id) @ 25°C:34.6A(Tc)
  • Rds On (Max) @ Id, Vgs:100 milliohm @ 21.9a, 10V
  • Vgs(th) (Max) @ Id:3.9V @ 1.9mA
  • Gate Charge (Qg) (Max) @ Vgs:200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:4500pF @ 25V

SPW35N60C3

Part NumberManufacturerDescriptionPackagePrice

SPW35N60C3

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